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The basic scenario of resistive switching in TiO₂ (Jameson et al., 2007) assumes the formation and electromigration of oxygen vacancies between the electrodes (Baiatu et al., 1990), so that the distribution of concomitant n-type conductivity (Janotti et al., 2010) across the volume can eventually be controlled by an external electric bias, as schematically shown in Figure 1B. Direct observations with transmission electron microscopy (TEM) revealed more complex electroforming processes in TiO₂ thin films. In one of the studies, a continuous Pt filament between the electrodes was observed in a planar Pt/TiO₂/Pt memristor (Jang et al., 2016). As illustrated in Figure 1C, the corresponding switching mechanism was suggested as the formation of a conductive nanofilament with a high concentration of ionized oxygen vacancies and correspondingly reduced Ti³⁺ ions. These ions induce detachment and migration of Pt atoms from the electrode via strong metal–support interactions (Tauster, 1987). Another TEM investigation of a conductive TiO₂ nanofilament revealed it to be a Magnéli phase Ti_nO_2n−1 (Kwon et al., 2010). Supposedly, its formation results from an increase in the concentrations of oxygen vacancies within a local nanoregion above their thermodynamically stable limit. This scenario is schematically shown in Figure 1D. Other hypothesized point defect mechanisms involve a contribution of cation and anion interstitials, although their behavior has been studied more in tantalum oxide (Wedig et al., 2015; Kumar et al., 2016). The plausible origins and mechanisms of memristive switching have been comprehensively reviewed in topical publications devoted to metal oxide memristors (Yang et al., 2008; Waser et al., 2009; Ielmini, 2016) as well as TiO₂ (Jeong et al., 2011; Szot et al., 2011; Acharyya et al., 2014). The resistive switching mechanisms in memristive materials are regularly revisited and updated in the themed review publications (Sun et al., 2019; Wang et al., 2020).

Although cosmetics are not meant for consumption, there are concerns that titanium dioxide in lipstick and toothpaste may be swallowed or absorbed through the skin.

According to the feedback of the manufacturers, the new mainstream factory has risen, and the focus of the overall market transaction has moved up. From the perspective of demand side, the current overall intention of the terminal to replenish inventory before the holiday is OK; From the supply side, some mainstream manufacturers have increased the load, and the actual output of the industry is stable. Most factories report a new price of around 17,000 yuan/ton, and some plastics and papermaking related downstream feedback some tight models are more expensive. Recent titanium dioxide raw material price trend is strong, titanium dioxide price support is more stable, comprehensive market factors, the current titanium dioxide market to maintain a price state.

However, the run rates improved after the Chinese government's consistent efforts to reduce electricity rationing in China. The demand forecast remained positive during the quarter, with inquiries coming in from both the local and international markets. As a result of the supply-demand mismatch, the FOB Wuhu debate for TiO2 rutile grade was decided at 3097 USD/MT at the end of the quarter.